发明名称 MONITORING BURN-IN TEST METHOD OF NAND TYPE FLASH MEMORY, IN WHICH AT LEAST TWO EXPECTED VALUES ARE USED AT ONE TEST TO DETERMINE PASS OR FAIL RESULT
摘要 PURPOSE: A monitoring burn-in test method of a NAND type flash memory is provided to drastically reduce the test time of the monitoring burn-in test(MBT) by using various expectation values at one test. CONSTITUTION: A monitoring burn-in test method of a NAND type flash memory includes the steps of: reading(S12) the result values of I/O0 and I/O1 after the performance of th test mode; determining(S15) the expectation value 1 selected among the output values is matched to the result value or not, maintaining the count if the result is matched and increasing the count if the result is not matched; determining(S18) the expectation value 2 selected among the output values is matched to the result value or not, maintaining the count if the result is matched and increasing the count if the result is not matched; and determining(S21) the count of the result value is 2 or not, processing as a fail if the result is 2 and processing as a pass if the result is not 2.
申请公布号 KR20040105384(A) 申请公布日期 2004.12.16
申请号 KR20030036749 申请日期 2003.06.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, HYEON TAE;CHOI, HO JEONG;KIM, BO U
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址