METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO REDUCE RESISTIVITY OF SILICIDE LAYER AND IMPROVE OPERATION CHARACTERISTIC

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to reduce resistivity of a silicide layer and improve an operation characteristic by forming a tungsten silicide layer including plenty of tungsten and by forming a silicon nitride layer by a heat treatment process after the tungsten silicide layer is formed. CONSTITUTION: A silicon layer doped with one of boron, phosphor and arsenic is formed on a substrate(21). The first source gas including at least one component of tungsten, titanium or tantalum whose enthalpy is more unstable than the doping material of the silicon layer and the second source gas including a silicon component are supplied to form a silicide layer containing excessive metal on the silicon layer.