| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of efficiently manufacturing a connection terminal penetrating through a substrate. <P>SOLUTION: In the method for manufacturing a semiconductor device comprising a substrate 10 on which a circuit section having a multilayer wiring structure and an electrode conductively connected to the circuit section are stacked in this order, and a connection terminal penetrating through the substrate 10 and the circuit section and conductively connected to the electrode, when a wire 40 in each wiring layer of the circuit section is formed, a part 241 of the connection terminal is formed simultaneously. In this manner, the connection terminal is formed in this order from the bottom in such a manner that a layer is attached to another one by one, while the wire of the circuit section is formed, therefore, the process can be simplified compared with the case where the process of forming the connection terminal is performed after the process of forming the circuit section. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
