INDUCTIVE COUPLING PLASMA PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve a device for coping with various problems caused by scale-up of the device in an inductive coupling plasma processing device where a dielectric wall is disposed at the ceiling of a processing chamber corresponding to a high frequency antenna.

SOLUTION: An inductive coupling plasma etching device includes a body container 1 that is partitioned into an antenna chamber 4 and the processing chamber 5 by a partitioning structure 2 including the dielectric wall 3. The high frequency antenna 13 is disposed inside the antenna chamber 4, a mounting base 22 for mounting an LCD glass substrate LS is disposed inside a processing chamber 5. A shower head including a shower cubicle 16 made of a metal is disposed between the mounting base 22 and the dielectric wall 3. The shower cubicle 16 has a shape that is extended in a direction crossing at right angle to a direction where the high frequency antenna 13 is extended.

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