| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element in which a luminous power-conversion efficiency is improved and which has a sufficient oscillation threshold-current density. SOLUTION: In the nitride semiconductor light-emitting element, a light-emitting layer 104 has a quantum well structure having a barrier layer composed of a nitride semiconductor, and a well layer composed of InGaN containing no impurity. The layer is formed among first layers 100 to 103 consisting of the n-type nitride semiconductor, and second layers 105 to 108 consisting of the p-type nitride semiconductor, and an intermediate layer composed of InGaN is formed between the barrier layer and the well layer. The light-emitting element is constituted so that the In composition ratios of the barrier layer, the well layer and the intermediate layer differ, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
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