发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ACCELERATION SENSOR, AND THE SEMICONDUCTOR ACCELERATION SENSOR MANUFACTURED BY THE MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable semiconductor acceleration sensor, and to provide the semiconductor acceleration sensor manufactured by the manufacturing method. <P>SOLUTION: The method for manufacturing the semiconductor acceleration sensor comprises a process for forming a plurality of acceleration sensor chips C in a semiconductor substrate B, wherein an active layer 21 and a support layer 23 are laminated while sandwiching an intermediate insulating layer 22; a process for performing the anode junction of upper and lower stoppers 51, 52 to the plurality of respective acceleration sensor chips C, C; and a process for cutting the semiconductor substrate B along a scribe lane 75 for cutting into respective semiconductor acceleration sensors. The method for manufacturing the semiconductor acceleration sensor has a process for forming a recess 73 for exposing the support layer 23 through the active layer 21 and the intermediate insulating layer 22 in the scribe lane 75 positioned between the respective acceleration sensor chips C, C in the scribe lanes 75, and a process for forming a metal film 71 in the recess 73 for making a continuity with the active layer 21 and the support layer 23 before the anode junction process. Accordingly, the acceleration sensor chip and the stopper member can be subjected to further uniform anode junction, so that the highly reliable semiconductor acceleration sensor can be manufactured. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004354350(A) 申请公布日期 2004.12.16
申请号 JP20030155698 申请日期 2003.05.30
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KAMI HIRONORI;SAITO HIROSHI;NAGAO SHUICHI
分类号 G01P15/12;B81B3/00;B81C1/00;G01P15/08;H01L29/84;(IPC1-7):G01P15/12 主分类号 G01P15/12
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