| 摘要 |
PROBLEM TO BE SOLVED: To prevent the leaving of recesses and projections having a pitch the same as that of a scanning pitch on a surface when a semiconductor wafer having an oxide film is subjected to a flattening work by local dry etching method. SOLUTION: In removing recesses and projections on a semiconductor wafer by scanning the surface of the semiconductor wafer with a controlled relative speed of a nozzle jetting a gas of activative species against the surface of the semiconductor wafer in the local dry etching method, the surface of the semiconductor wafer is heated whereby the etching is effected under a condition in which the etching rates of the oxide film formed on the surface and a silicon single body below the oxide film are approached substantially. COPYRIGHT: (C)2005,JPO&NCIPI
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