| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device on which a bipolar transistor containing an epitaxial layer adapted to a high-speed operation and having a high performance is loaded. SOLUTION: In the semiconductor device in which a base layer is formed on a semiconductor substrate by an epitaxial growth and which has the bipolar transistor using a part of the base layer as a base extraction region, a silicon layer is formed in the upper section of the base extraction region, and a silicide layer is formed on the silicon layer. COPYRIGHT: (C)2005,JPO&NCIPI
|
