| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT which is equipped with a silicide layer that is provided inexpensively at a low temperature and capable of reducing a resistance of contact between a source electrode layer and a semiconductor layer, and between a drain electrode layer and the semiconductor layer. SOLUTION: A gate insulating film 21 is formed on a semiconductor layer 22 so as to cover a channel region 42. The gate insulating film 21 is equipped with a first contact hole 21a which exposes a part of a source region 40, and a second contact hole 21b which exposes a part of a source region 41. A first and a second silicide layer 31a and 31b are obtained by turning metal layers, which are deposited covering the parts of the source region 40 and the drain region 41 exposed by the contact holes 21a and 21b and the contact holes 21a and 21b, to silicide by the use of a silane gas or a mixed gas containing silane gas. The source electrode layer 23 is formed on the first silicide layer 31a. The drain electrode layer 24 is deposited on the second silicide layer 31b. COPYRIGHT: (C)2005,JPO&NCIPI
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