发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress test costs by enabling a DC burn-in test using an equalizer circuit in place of a dynamic burn-in test. SOLUTION: A plurality of bit lines for inputting/outputting data for a memory cell 1 arranged in a matrix form are constituted of a plurality of bit line pairs BLP1 to BLP4 repeatedly arranged by setting two bit lines connected to the same sense amplifier as a pair. The two bit lines constituting the bit line pair are connected to different voltage supply lines 14 and 15 through bit line connection control transistors 11 and 12. Thus, the freedom of setting a burn-in voltage level is high, and a burn-in voltage (electric stress) is applied among all the bit lines. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004355720(A) 申请公布日期 2004.12.16
申请号 JP20030152333 申请日期 2003.05.29
申请人 SONY CORP 发明人 HORIGUCHI NORIAKI;TANIGUCHI KAZUO
分类号 G01R31/30;G01R31/28;G11C11/401;G11C11/409;G11C29/00;G11C29/06;G11C29/10;(IPC1-7):G11C29/00 主分类号 G01R31/30
代理机构 代理人
主权项
地址