发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH SURFACE STRAP AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor memory device includes memory cells each having a trench capacitor and a fin-gate-type MOSFET that selects the trench capacitor. One of activation regions of the MOSFET, which are provided in a pillar, and one of electrodes of the trench capacitor are electrically connected by a surface strap. The surface strap contacts an upper surface and an upper part of a side wall of the pillar.
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申请公布号 |
US2004251485(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20030644415 |
申请日期 |
2003.08.20 |
申请人 |
KITO MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI |
发明人 |
KITO MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI |
分类号 |
H01L27/108;H01L21/336;H01L21/8242;H01L29/76;H01L29/786;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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