发明名称 |
Bilayered metal hardmasks for use in dual damascene etch schemes |
摘要 |
A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).
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申请公布号 |
US2004251234(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20030461090 |
申请日期 |
2003.06.13 |
申请人 |
KUMAR KAUSHIK;CLEVENGER LAWRENCE;DALTON TIMOTHY;LA TULIPE DOUGLAS C.;COWLEY ANDY;KALTALIOGLU ERDEM;SCHACHT JOCHEN;SIMON ANDREW H.;HOINKIS MARK;KALDOR STEFFEN K.;YANG CHIH-CHAO |
发明人 |
KUMAR KAUSHIK;CLEVENGER LAWRENCE;DALTON TIMOTHY;LA TULIPE DOUGLAS C.;COWLEY ANDY;KALTALIOGLU ERDEM;SCHACHT JOCHEN;SIMON ANDREW H.;HOINKIS MARK;KALDOR STEFFEN K.;YANG CHIH-CHAO |
分类号 |
H01L21/033;H01L21/311;H01L21/768;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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地址 |
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