发明名称 Substrate processing apparatus and substrate processing method
摘要 A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.
申请公布号 US2004253833(A1) 申请公布日期 2004.12.16
申请号 US20040488406 申请日期 2004.03.03
申请人 TAKEHIKO ORII;AMAI MASARU 发明人 TAKEHIKO ORII;AMAI MASARU
分类号 H01L21/00;(IPC1-7):H01L21/31;H01L21/469;C23F1/00 主分类号 H01L21/00
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