发明名称 |
Substrate processing apparatus and substrate processing method |
摘要 |
A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W. |
申请公布号 |
US2004253833(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040488406 |
申请日期 |
2004.03.03 |
申请人 |
TAKEHIKO ORII;AMAI MASARU |
发明人 |
TAKEHIKO ORII;AMAI MASARU |
分类号 |
H01L21/00;(IPC1-7):H01L21/31;H01L21/469;C23F1/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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