| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor high frequency device which can be miniaturized and made lightweight, whose manufacturing method is easy and which has low loss even in a high frequency band of not less than 5GHz when compared to the conventional technology, and to provide a manufacturing method of the device. <P>SOLUTION: An inductor device 60 is formed of a recessed part 1a formed on a silicon substrate 1, wiring conductor films 50 being strip conductors in a meander shape which are formed on a surface of the silicon substrate 1, and lead out electrodes 50a and 50b positioned on the silicon substrate 1 at both ends. The inductance device 60 is flip chip-mounted by using metal bumps 9 and resin reinforcing materials 10 so that the recessed part 1a of the silicon substrate 1 confronts forming face of an RF-CMOS element circuit 11a formed on an another silicon substrate 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
