FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE ON WHICH THE FIELD EFFECT TRANSISTOR IS PACKAGED

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor with which a threshold voltage can be highly accurately set, and semiconductor device with said field effect transistor packaged thereon. SOLUTION: In the field effect transistor, a threshold voltage change layer is provided for increasing/decreasing a concentration of a carrier in a channel layer of the field effect transistor, and the threshold voltage of the field effect transistor is changed by the threshold voltage change layer. Particularly, the threshold voltage change layer is formed on a semiconductor wafer. Besides, the threshold voltage change layer is formed by the ion implantation of impurities. The semiconductor device packages such a field effect transistor thereon. COPYRIGHT: (C)2005,JPO&NCIPI