| 摘要 |
The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present invention such as a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according to the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, that is a temperature higher 1000° C.
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