发明名称 |
PLASMA TREATMENT APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of a stabilized and continuous treatment with the maintenance period extended. <P>SOLUTION: The plasma treatment apparatus has a specimen mount 101 provided with a vacuum treatment container 1 with process gas introducing and evacuating means, a shield electrode 14 formed on the peripheral wall side of the vacuum treatment container 1, and an antenna electrode 51 for radiating a high-frequency power into the vacuum treatment container 1. A first high-frequency power is supplied to the antenna electrode 51, and a high-frequency power lower in frequency than the first high-frequency power is supplied to the antenna electrode 51 and a shield electrode 15. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004356430(A) |
申请公布日期 |
2004.12.16 |
申请号 |
JP20030152934 |
申请日期 |
2003.05.29 |
申请人 |
HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KAZUMI HIDEYUKI;MAEDA KENJI;YOSHIDA TAKESHI;OYAMA MASATOSHI |
分类号 |
H05H1/46;B01J3/00;B01J19/08;C23F1/00;C23F4/00;H01J37/32;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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