| 摘要 |
PROBLEM TO BE SOLVED: To provide a discrete device which is equipped with all electrodes formed on the same side and suitable for a chip-size package. SOLUTION: The discrete device is equipped with one conductivity-type semiconductor substrate which is doped as high in concentration as prescribed, a one conductivity-type epitaxial layer lower in concentration than the one conductivity-type semiconductor substrate, a one conductivity-type diffusion layer which is higher in concentration than the one conductivity-type epitaxial layer, and electrodes which are all formed on the same side. COPYRIGHT: (C)2005,JPO&NCIPI
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