发明名称 |
SILICON-ON-INSULATOR DEVICE |
摘要 |
A Silicon on Insulator (SOI) device is disclosed wherein an extension of P-type doping (303) is implanted between the buried oxide layer of the device and the SOI layer. The extension is of a size and shape to permit the source (309) to be biased at a voltage significantly less than the handler wafer (304) and drain, a condition under which prior art SOI devices may not properly operate. |
申请公布号 |
WO2004109809(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
WO2004IB01849 |
申请日期 |
2004.06.08 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;LETAVIC, THEODORE;PETRUZZELLO, JOHN |
发明人 |
LETAVIC, THEODORE;PETRUZZELLO, JOHN |
分类号 |
H01L29/06;H01L29/10;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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