| 摘要 |
<p>A semiconductor film is formed in a gap between a source electrode and a drain electrode of a thin film transistor in an active-matrix type liquid crystal display device. A metal film for a gate electrode is formed on said semiconductor film via a gate insulating film. A photo-resist film, having a thick portion in region including the gap and having an opening portion in contact-hole forming region, is formed on the metal film. A contact-hole is formed in the gate insulating film by using the organic material film as a mask. The organic material film is left on the region including the gap. A gate electrode is formed on the region including the gap by etching the first metal film by using the remained organic material film as a mask. An organic material film, having projections and depressions, is formed on a reflective region except the contact-hole forming region. A reflective electrode is formed on the organic material film having projections and depressions</p> |
