Verfahren zur Herstellung einer temperbarer Mehrschichtkontaktbeschichtung, insbesondere einer temperbaren Mehrschichtkontaktmetallisierung

摘要

Deposition of a temperable multilayer contact coating, especially a tempered multilayer contact metallizing onto a semiconductor material by the steps: application of a masking layer to the semiconductor, formation of a window in the masking layer, application of a contact metal layer to the semiconductor, application of an external layer and/or a barrier layer on or above the contact metal layer (4), and removal of the contact metal on the masking layer.