发明名称 |
CONTACTS FABRIC USING HETEROSTRUCTURE OF METAL/SEMICONDUCTOR NANORODS AND FABRICATION METHOD THEREOF |
摘要 |
<p>Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky contact fabric having a rectification characteristic is formed by selectively depositing metal of nano-sizes onto predetermined portions of zinc oxide/semiconductor nanorods and controlling the work function of the deposited metal and the interfacial characteristics of metal/zinc oxide. The contact fabric can be applied to various nano-sized electronic devices, including Schottky diodes, optical devices, and arrays thereof.</p> |
申请公布号 |
WO2004109815(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
WO2004KR00374 |
申请日期 |
2004.02.24 |
申请人 |
POSTECH FOUNDATION;YI, GYU-CHUL;PARK, WON-IL |
发明人 |
YI, GYU-CHUL;PARK, WON-IL |
分类号 |
H01L21/285;H01L21/44;H01L29/06;H01L29/22;H01L29/45;H01L29/47;H01L31/108;H01L33/20;(IPC1-7):H01L33/00;B82B3/00 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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