PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which the capacitor area of a cross point type FeRAM can be increased while enhancing the product performance and work efficiency, and to provide a semiconductor device. SOLUTION: A lower electrode layer 2A other than a ferroelectric capacitor forming region X is formed thinner than the ferroelectric capacitor forming region X so that a ferroelectric layer 2B is formed only on the ferroelectric capacitor forming region X of the lower electrode layer 2A. COPYRIGHT: (C)2005,JPO&NCIPI