METHOD OF MANUFACTURING SILICON-BASED FILM CONTAINING CARBON USING CATHODE COUPLING-TYPE PLASMA CVD EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a film manufacturing method capable of finely changing carbon contents in a film, in a method of manufacturing a silicon film containing a carbon by using cathode coupling-type plasma CVD equipment and using hexamethyldisilazane (HMDS) as material gas. SOLUTION: The manufacturing method comprises the steps of mixing hydrogen gas with the HMDS and reactant gas consisting of gas containing nitrogen atom gas and/or gas containing oxygen atom gas; and varying the carbon contents of the silicon film (SiN film, SiO2film, and SiON film) by changing the mixing ratio of the reactant gas and the hydrogen gas. COPYRIGHT: (C)2005,JPO&NCIPI