SEMICONDUCTOR DEVICE AND FABRICATING METHOD FOR RESTRICTING INCREASE OF CAPACITANCE BETWEEN LINES BY REMOVING HIGH-RESISTANCE LAYER WITH REDUCTIVE GAS

摘要

PURPOSE: A semiconductor device and a fabricating method thereof are provided to restrict an increase of capacitance between lines and reduce leakage current by removing a high-resistance layer with a reductive gas. CONSTITUTION: A stopper layer(3) is formed on a metal line. An interlayer dielectric(6) is formed on the stopper layer. The interlayer dielectric has Young's modulus of 7 GPa or more and a relative dielectric constant of 3 or less. An opening part approaching the stopper layer is formed by etching the interlayer dielectric. A via hole(10) is formed by etching an exposed part of the stopper layer. The metal line is exposed. A line groove(11) is formed by etching the interlayer dielectric. A plasma process for a surface of the exposed metal line is performed by using a reductive gas.