| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device ensuring high reliability in electrical connection or in high integration with the memory part peripheral circuit in a cross-point type FeRAM, and to provide its manufacturing method. SOLUTION: Conductive members 201a and 202a being connected with the source region S and drain region D of MOS element 13 are buried in an insulating film 14. A lower electrode 15 includes a pattern extending from above an element isolation insulating film 12 to above the conductive member 201a, and a pattern provided on the conductive member 202a. A pattern of a ferroelectric film 16 is formed on the lower electrode 15 and an upper electrode 17 is formed on the ferroelectric film 16. A protective film 18 covers a specified region including a capacitor element consisting of the lower electrode 15, the upper electrode 17 and the interposed ferroelectric film 16. An interlayer insulating film 19 is formed on the entire surface including the protective film 18, the lower electrode 15 and the insulating film 14. Each connection hole H11, H12 is formed above the insulating film 19 and each wiring member 20 is led out. COPYRIGHT: (C)2005,JPO&NCIPI
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