| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a ferroelectric capacitor. SOLUTION: The semiconductor device comprises: an inter-layer insulating layer formed on a substrate provided with an integrated circuit and provided with a contact hole which exposes a part of the integrated circuit; the ferroelectric capacitor formed by stacking a first electrode layer, a ferroelectric layer and a second electrode layer in the order on the inter-layer insulating layer; and an insulating side wall film covering the peripheral edge of the ferroelectric capacitor excluding the peripheral edge part of the contact hole. The second electrode layer and the integrated circuit are connected by an electrically connected wiring layer through the contact hole. COPYRIGHT: (C)2005,JPO&NCIPI
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