| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device manufacturing method which can improve sensitivity of a solid state imaging device while restraining generation of a dark current, and manufacture easily a solid state imaging device in which wiring is not damaged by etching treatment. SOLUTION: A light receiving part 12 is formed on a semiconductor substrate 1, a first insulating film 6 is formed on a light receiving part 12 and a substrate 1, a metal film for wiring is formed on the first insulating film 6, a protective film 8 is formed on the metal film, a resist film is formed in a prescribed region of the protective film, a part of the protective film 8 and each metal film are eliminated by using the resist film, wiring 7 is formed whose upper part is covered with the protective film 8, a second insulating film 10 containing hydrogen is formed on the wiring 7 and the first insulating film 6, heat treatment is performed to the second insulating film 10, and anisotropic etching treatment is performed to the whole surface of the second insulating film 10, thereby eliminating the second insulating film 10. COPYRIGHT: (C)2005,JPO&NCIPI
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