| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of coping with the trend toward lower power and realizing a reduction in size. <P>SOLUTION: An access transistor provided between a storage node and a bit line is a P-channel MOS transistor composed of P-type impurity regions 202 and 204 formed within an N-type well 254 and a gate electrode 218. A buried wiring 224 is made of a metal having a high melting point such as tungsten and provided in lamination at the upper part of a drive transistor formed on the main surface of the access transistor and the P-type well 256. A polysilicon film 270 making up a P-channel TFT, which is a load element, is formed at the upper part of the flattened buried wiring 224 via an interlayer insulation film 268. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
