| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device designed for a protection circuit for realizing long life of an Li<SP>+</SP>battery pack and for miniaturization. <P>SOLUTION: Power MOS FETs Q<SB>1</SB>and Q<SB>2</SB>formed in a semiconductor chip 3 to function the protection circuit for the Li<SP>+</SP>battery pack, a source pad, a gate pad, a gate pad, and a source pad are arranged sequentially from one direction. According to the pad arrangement, with respect to lead pins 6b of a lead frame 6; a source pin S<SB>1</SB>, a gate pin G<SB>1</SB>, a gate pin G<SB>2</SB>, and a source pin S<SB>2</SB>are sequentially from one pin. On a wiring pattern 8 on a mounting substrate 5; a source wiring pattern MS<SB>1</SB>, a gate wiring pattern MG<SB>1</SB>, a gate wiring pattern MG<SB>2</SB>, and a source wiring pattern MS<SB>2</SB>are arranged sequentially from one direction as a layout. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
