| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce stress to be applied to wiring layers and inter-layer insulating films in a manufacturing process of a semiconductor device using low dielectric insulating films as the inter-layer insulating films. <P>SOLUTION: As to the semiconductor device in which buried wires 20 are formed in the inter-layer insulating films 15, 17 formed from low dielectric insulating films whose mechanical strength is lower than that of a silicon oxide film formed by the CVD method e.g. like a multilayer, wiring 13 of the 1st layer of which the lower layer does not arrange a low dielectric insulating film is used as a bonding pad and bump electrodes 24 whose height is higher than the position of the uppermost layer on which buried wires 20 are formed are formed on the wiring 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
