| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high quality silicon carbide single crystal which has excellent electric breakdown property, heat resistance, radiation resistance, or the like, and is suitable for an electronic device such as a semiconductor wafer, an optical device such as a light emitting diode, or the like, and which is free from the contamination of polycrystal or polymorphism or defects such as micropipes. <P>SOLUTION: In the method for manufacturing the silicon carbide single crystal, a raw material for sublimation is stored in a first end part in a reaction vessel, a seed crystal of silicon carbide is arranged at the end part nearly opposed to the raw material for sublimation in the reaction vessel, and the silicon carbide single crystal is grown by recrystallizing the sublimated raw material on the seed crystal. In this method, a sealing section is provided in the reaction vessel, and the silicon carbide single crystal is grown on the seed crystal provided at the sealing section while preventing leakage of the sublimated raw material for sublimation from the sublimation atmosphere by using the sealing section. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
