| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable and inexpensive high luminance, low operating voltage light emitting diode exhibiting excellent reproducibility in which the yield is prevented from lowering due to stripping of a transparent conductive film and the forward operating voltage can be lowered without providing an intermediate band gap layer. <P>SOLUTION: Direct transition Al<SB>X</SB>Ga<SB>1-X</SB>As (0.01≤X≤0.43) is provided between a p-type AlGaInP clad layer 5 and an ITO film 7. Consequently, a high output can be attained while realizing a low operating voltage and a low cost. Furthermore, a light emitting diode can be fabricated with high yield. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
