DMOS device of small dimensions and manufacturing process thereof

摘要

In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.