| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a boron diffusing source wherein deformation etc. are not generated even if the source has thin profile, reoxidation process is also unnecessary, and further reuse is possible. <P>SOLUTION: The boron diffusing source for semiconductor manufacturing consists of porous body of silicon nitride containing boric acid of 7-25 mass %. In this case, it is desirable that the porous body of silicon nitride has composition of silicon nitride of 45-100 mass % and boron nitride of 0-55 mass %, porosity is 20-50%, and bending strength is 20-300 MPa. The boron diffusing source for semiconductor manufacturing adds boric acid to porous body of silicon nitride wherein boric acid content is at most 3 mass % (it contains 0). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
