| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor element by which polyimide is caused to reduce thermal damages and sufficient thermal energy can be given to amorphous silicon. SOLUTION: After a highly heat-conductive film is formed between the polyimide and an amorphous film composed mainly of silicon, the amorphous film is activated and crystallized on the highly heat-conductive film by using a pulse laser. In this case, it is preferable that the highly heat-conductive film is one made of a material selected from among the group composed of aluminum, copper, gold, silver, chromium, titanium, carbon, and nickel. COPYRIGHT: (C)2005,JPO&NCIPI
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