| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate and its forming method wherein, in a strain layer/stain-applied crystal layer structure, the crystallinity deterioration of the strain layer due to crystal defects caused in the strain-applied crystal layer structure is reduced, and the strain layer/strain-applied crystal layer structure is formed with a thin film on an insulation layer. SOLUTION: An insulation layer on a Si substrate and an SiGe layer on another Si substrate are bonded, using the semiconductor laminating technology, and the Si substrate at the SiGe layer side is removed by polishing, etc. COPYRIGHT: (C)2005,JPO&NCIPI
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