LASER HAVING REDUCED IMPACT OF PARASITIC ETALON

摘要

PROBLEM TO BE SOLVED: To improve a performance of a laser by approximately matching spectral periods of a plurality of etalons existing in a laser cavity. SOLUTION: A discrete-tunable-external-cavity semiconductor laser having a fixed grid etalon 16 in the laser cavity 21 with a free spectral region (FSR) of the etalon 16 being the integer times of the FSR of the cavity 21 and with the integer times of the FSR of a chip parasitic etalon caused by the face 12-1, 12-2 of a semiconductor gain element 10 is provided. A fixed wavelength external cavity semiconductor laser having the FSR of the chip etalon being the integer times of that of the cavity 21 and the FSR of a mode suppressing etalon 16' which is inserted is the cavity 21 being the integer times of the FSR of the chip etalon. COPYRIGHT: (C)2005,JPO&NCIPI