发明名称 Method and apparatus for production of high purity silicon
摘要 High purity silicon usable for production of solar cells is easily produced with high production efficiency. In a rotary chamber (50) made of quartz, which is evacuated and filled with an hydrogen-argon atmosphere containing SiF4, a plasma area (60) is generated by supplying electric power from a coil (51) to decompose SiF4 and produce silicon as being fine powder particles. Fine particles of seed silicon (Si) in the rotating reaction chamber are picked up and transported upward by weirs (52), and then they can fall by gravity into the plasma area where silicon elements produced by decomposition of SiF4 are deposited onto surfaces of the silicon fine particles.
申请公布号 US2004250764(A1) 申请公布日期 2004.12.16
申请号 US20020276668 申请日期 2002.12.06
申请人 NAGANO MITSUGU;MORIYA TAKEHIKO;TAKOSHIMA TAKEHIRO;MORI NOBUYUKI;YAMAGUCHI FUMITERU 发明人 NAGANO MITSUGU;MORIYA TAKEHIKO;TAKOSHIMA TAKEHIRO;MORI NOBUYUKI;YAMAGUCHI FUMITERU
分类号 B01J19/08;C01B33/027;C01B33/029;C01B33/03;C23C14/24;C23C14/54;C23C16/24;C23C16/44;C23C16/507;C30B25/10;C30B25/18;(IPC1-7):C01B33/02;C23C16/00 主分类号 B01J19/08
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