发明名称 |
SONOS memory device and method of erasing data from the same |
摘要 |
A SONOS memory device, and a method of erasing data from the same, includes injecting charge carriers of a second sign into a trapping film, which traps charge carriers of a first sign to store data therein. The charge carriers of the second sign are generated by an electric field formed between one of a first and second electrodes contacting at least one bit line and a gate electrode contacting a word line. A blocking film may be provided between the gate electrode and the trapping film. The charge carriers of the second sign may be hot holes. This erasing improves erasing speed, thereby improving performance of the SONOS memory device.
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申请公布号 |
US2004251490(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040867706 |
申请日期 |
2004.06.16 |
申请人 |
CHAE SOO-DOO;KIM CHUNG-WOO;LEE JO-WON;KIM MOON-KYUNG |
发明人 |
CHAE SOO-DOO;KIM CHUNG-WOO;LEE JO-WON;KIM MOON-KYUNG |
分类号 |
H01L21/8247;G11C16/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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