METHOD FOR CORRECTING TEMPERATURE OF CVD TiN APPARATUS BY USING TEMPERATURE CORRECTION WAFER FOR MEASURING CORRECT TEMPERATURE

摘要

PURPOSE: A method for correcting a temperature of a CVD TiN apparatus is provided to correct a temperature of a heater of the CVD TiN apparatus by comparing resistances before and after a thermal process for a temperature correction wafer. CONSTITUTION: An initial resistance of a temperature correction wafer is measured(S200). A thermal process for the temperature correction wafer is performed under a temperature range of 380 to 450 degrees centigrade(S300). A varied resistance of the temperature correction wafer is measured and a temperature correction formula is extracted thereby(S400). The temperature correction wafer is loaded into a CVD TiN apparatus(S500). A thermal correction process is performed at the temperature range of 380 to 450 degrees centigrade within the CVD TiN apparatus(S600). A varied resistance of the temperature correction wafer is measured(S700). A real temperature is calculated and the temperature correction process is performed by using the real temperature(S800).