PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance fabrication yield of semiconductor device by preventing adhesion of dust particles to a semiconductor wafer. SOLUTION: A semiconductor wafer 10 loaded to a cassette case 11 located at a loader/unloader section 2 is carried through a carrying lane 12 to a wafer inverting chamber 3 and inverted. Ozone water or hydrogen peroxide water is then supplied to the rear surface of the semiconductor wafer 10 thus forming a silicon oxide film on the rear surface of the semiconductor wafer 10. Subsequently, the semiconductor wafer 10 is carried to a CMP processing unit 4 and the surface of the semiconductor wafer 10 is subjected to CMP processing. Since the rear surface of the semiconductor wafer 10 is rendered hydrophilic by forming a silicon oxide film, dust particles can be prevented from adhering to the rear surface of the semiconductor wafer 10 during CMP processing. COPYRIGHT: (C)2005,JPO&NCIPI