发明名称 ION IMPLANTATION DEVICE AND METHOD FOR SPECIFYING PART WHEREIN CAUSE OF PARTICLE INCREASE OCCURS
摘要 PROBLEM TO BE SOLVED: To improve effective use efficiency and productivity of an ion implantation device. SOLUTION: The ion implantation device is provided with an ion source 1 deriving ion beams, a mass separation magnet 2 taking out only ions having a specified ratio of mass and charge, an acceleration tube 3 accelerating the ion beams so that energy required for ion implantation is given, a Q lens 4 converging the ion beams, a beam line including a deflector 5 except for a neutral molecule included in the ion beam, and an end station 6 where an object is placed with which the ion beam is irradiated. The ion implantation device is provided with a particle monitoring device 17f measuring the number of particles in the end station and particle monitoring devices 17 (b, c, d, e and f) measuring the number of particles in the beam line. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004356297(A) 申请公布日期 2004.12.16
申请号 JP20030151073 申请日期 2003.05.28
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MIZOGUCHI TETSURO;NOGUCHI TAKAKAZU;SEKI TAKAYOSHI
分类号 H01J37/317;H01L21/02;H01L21/265;H01L27/12;(IPC1-7):H01L21/265 主分类号 H01J37/317
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