发明名称 METHOD FOR ANALYZING DEFECT OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for analyzing defects capable of accurately classifying defects such as cyclical block defects and cyclical line defects for defect analysis. SOLUTION: The number of defective bits is calculated for each line and column from a fail bit map 9, and the average number of defective bits are obtained for lines and columns. 1/2 of the average number of defective bits for the lines and the columns is set as line and column threshold values, and the number of defective bits of each line and each column are converted into digital numbers based on the line and column threshold values. Line and column average values are obtained from the number of digitized defective bits. When the column average value is larger than a value obtained by multiplying the line average value by a coefficient, it is classified as a line-direction block defect. When the line average value is larger than a value obtained by multiplying the column average value by a coefficient, it is classified as a column-direction block defect. When the column average value is equal to/lower than the value obtained by multiplying the line average value by the coefficient and the line average value is equal to/lower than the value obtained by multiplying the column average value by the coefficient, a random block defect is determined. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004355717(A) 申请公布日期 2004.12.16
申请号 JP20030152178 申请日期 2003.05.29
申请人 RENESAS TECHNOLOGY CORP 发明人 OTA FUMITO
分类号 G01R31/28;G01R31/3185;G11C29/44;G11C29/56;H01L21/66;(IPC1-7):G11C29/00 主分类号 G01R31/28
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