发明名称 |
Method for manufacturing gallium nitride (GaN) based single crystalline substrate |
摘要 |
Disclosed is a method for manufacturing a gallium nitride (GaN)-based single crystalline substrate comprising the steps of (a) forming a GaN-based single crystalline bulk on an upper surface of a growth substrate; (b) forming grooves through the growth substrate so that the growth substrate is patterned and divided into several units by the grooves, each of the grooves having a designated width; and (c) separating the GaN-based single crystalline bulk from the growth substrate by irradiating a laser beam on a lower surface of the growth substrate.
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申请公布号 |
US2004253796(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20030622466 |
申请日期 |
2003.07.21 |
申请人 |
NA JEONG SEOK;YOO SEUNG JIN;PARK YOUNG HO |
发明人 |
NA JEONG SEOK;YOO SEUNG JIN;PARK YOUNG HO |
分类号 |
C30B29/38;C23C16/34;C30B25/02;C30B33/00;H01L21/20;(IPC1-7):H01L21/00;C30B1/00;H01L21/36 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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