Method for fabricating MOS transistors,申请号GB19910017195-传众专利搜索

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发明名称	Method for fabricating MOS transistors
摘要
申请公布号	GB2247349(A)	申请公布日期	1992.02.26
申请号	GB19910017195	申请日期	1991.08.08
申请人	* SAMSUNG ELECTRONICS CO LIMITED	发明人	KYOUNG-TAE * KIM
分类号	H01L21/28;H01L21/336;H01L29/49	主分类号	H01L21/28
代理机构		代理人
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地址

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