发明名称 METHOD FOR FORMING LATTICE IN SUBSTRATE TO INCREASE OUTER QUANTUM EFFICIENCY
摘要 PURPOSE: A method for forming a lattice in a substrate is provided to increase outer quantum efficiency by obtaining a high lattice density and by increasing refraction and scattering of light on a lattice surface. CONSTITUTION: The first mask pattern is formed on a substrate. The second mask pattern is formed on the substrate having the first mask pattern wherein at least a part of the second mask pattern overlaps the first mask pattern but the entire first mask pattern is not covered with the second mask pattern. The substrate including the first and second mask patterns is etched to form a lattice.
申请公布号 KR100463288(B1) 申请公布日期 2004.12.15
申请号 KR20040040519 申请日期 2004.06.03
申请人 EPIVALLEY CO., LTD. 发明人 KIM, CHANG TAE
分类号 H01L33/22;H01L33/20;(IPC1-7):H01L33/00;H01L21/027 主分类号 H01L33/22
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