Thermal-assisted magnetic memory storage device

摘要

A thermal-assisted probe based magnetic memory (50) storage device. In a particular embodiment, magnetic tunnel junction memory cells (100) and at least one movable probe (150) with a tip (154) characterized by a conductor (156) and a heat generator (158) are provided. The movable probe (150) may be placed in electrical and thermal contact with a given memory cell (100). The memory cells (100) include a material wherein the coercivity is decreased upon an increase in temperature. The magnetic field (300) provided by the read conductor (156) will not alter the orientation of an unheated cell (100), but may alter the orientation of a heated cell (100). A related method of use is also provided. <IMAGE>