发明名称 |
Process of making an all-silicon microphone |
摘要 |
A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.
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申请公布号 |
US6829814(B1) |
申请公布日期 |
2004.12.14 |
申请号 |
US20020231325 |
申请日期 |
2002.08.29 |
申请人 |
DELPHI TECHNOLOGIES, INC. |
发明人 |
FREEMAN JOHN E.;BANEY WILLIAM J.;BETZNER TIMOTHY M.;CHILCOTT DAN W.;CHRISTENSON JOHN C.;VAS TIMOTHY A.;QUEEN GEORGE M;LONG STEPHEN P |
分类号 |
B81C1/00;H01L21/00;H04R19/00;H04R25/00;H04R31/00;(IPC1-7):H04R31/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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