发明名称 Nonvolatile semiconductor memory device
摘要 A sector structure of a flash memory device minimizes a layout area in a chip without deteriorating a high-speed operation. The sector structure of the flash memory device includes a plurality of sectors, each sector including memory cell transistors in a cell array block sharing a common bulk region with transistors in a column decoder block.
申请公布号 US6831860(B2) 申请公布日期 2004.12.14
申请号 US20010997080 申请日期 2001.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE BYEONG-HOON;LEE SEUNG-KEUN
分类号 G11C16/02;G11C16/04;G11C16/08;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04;G11C16/06 主分类号 G11C16/02
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