发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A sector structure of a flash memory device minimizes a layout area in a chip without deteriorating a high-speed operation. The sector structure of the flash memory device includes a plurality of sectors, each sector including memory cell transistors in a cell array block sharing a common bulk region with transistors in a column decoder block.
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申请公布号 |
US6831860(B2) |
申请公布日期 |
2004.12.14 |
申请号 |
US20010997080 |
申请日期 |
2001.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYEONG-HOON;LEE SEUNG-KEUN |
分类号 |
G11C16/02;G11C16/04;G11C16/08;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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